Bilder dienen nur der Illustration
Hersteller-Nummer | K4B2G1646F-BYMAO |
Hersteller | SAMSUNG |
Produktkategorie | DDR3L SDRAM |
IC-Code | 128MX16 DDR3L |
Gehäuse | FBGA-96 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.35V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | 1120 |
Abmessungen Karton | |
Number Of Words | 128M |
Bit Organization | x16 |
Density | 2G |
Internal Banks | 8 Banks |
Generation | 7th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4B2G1646F-BYMAO | 51.200 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT41K128M16JT-107:K TR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107ESK | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107G | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107G:K | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107G:K 2G GDDR3 | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107GK | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107K | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16TW-107 ES:N | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16TW-107:N | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |