K4B4G0846B-HYH9
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4B4G0846B-HYH9 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR3 SDRAM |
| IC-Code | 512MX8 DDR3L |
| Andere Bezeichnungen | K4B4G0846B-HYH9000 |
Produktbeschreibung
| Gehäuse | FBGA-78 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.35V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1333 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 3rd Generation |
| Power | Low VDD(1.35V) |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4B4G0846B-HYH9 | 4.935 | Anfrage senden | |
| K4B4G0846B-HYH9 | 2.935 | Anfrage senden | |
| K4B4G0846B-HYH9 | 6.014 | Anfrage senden | |
| K4B4G0846B-HYH9 | 3.314 | Anfrage senden | |
| K4B4G0846B-HYH9 | 6.051 | Anfrage senden | |
| K4B4G0846B-HYH9 | 6.051 | 1325 | Anfrage senden |
| K4B4G0846B-HYH9000 | 1.528 | 13+ | Anfrage senden |
| K4B4G0846B-HYH9 | 1.105 | Anfrage senden | |
| K4B4G0846B-HYH9 | 0 | Anfrage senden | |
| K4B4G0846B-HYH9 | 10.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| MT41K512M8RA-15E | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RA-15E ES:D | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RA-15E M ES:D | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RA-15E M:D | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RA-15E:D | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RA-15EM | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RH-15E ES:E | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RH-15E ES:J | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RH-15E M:E | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |
| MT41K512M8RH-15E:J | FBGA-78 | 1.35V | 1333 MBPS | 0 C~+85 C |