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Hersteller-Nummer | K4B4G0846E-BYMA000/H5TQ4G83EFR |
Hersteller | SAMSUNG |
Produktkategorie | DDR3L SDRAM |
IC-Code | 512MX8 DDR3L |
Gehäuse | FBGA-78 |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 1.35V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4B4G0846E-BYMA000/H5TQ4G83EFR | 6.286 | 20+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
H5TC4G83AFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDAR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83DFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |