Bilder dienen nur der Illustration
Hersteller-Nummer | K4B4G1646D-BYMA000(HK).KR |
Hersteller | SAMSUNG |
Produktkategorie | DDR3L SDRAM |
IC-Code | 256MX16 DDR3L |
Gehäuse | FBGA-96 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.35V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT41K256M16TW-107 IT:E | FBGA-96 | 1.35V | 1866 MBPS | 0 C TO +85 C |
MT41K256M16TW-107 IT:N | FBGA-96 | 1.35V | 1866 MBPS | 0 C TO +85 C |
MT41K256M16TW-107 IT:P TRAY | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 M ES:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 M:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 MICRON | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 N | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 TI:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K256M16TW-107 V:P | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |