Bilder dienen nur der Illustration
Hersteller-Nummer | K4B4G1646DBMFA |
Hersteller | SAMSUNG |
Produktkategorie | DDR3 SDRAM |
IC-Code | 256MX16 DDR3 |
Gehäuse | FBGA-96 |
Verpackung | TAPE ON REEL |
RoHS | RoHS |
Spannungsversorgung | 1.5 V |
Betriebstemperatur | -40 C~+95 C |
Geschwindigkeit | 1866 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Low VDD(1.35V) |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4B4G1646DBMFA | 20.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
AS4C256M16D3LB-10BIN | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
AS4C256M16D3LB-10BINTR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63AFR-RDI | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63CFR-RDC/I | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63CFR-RDI | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63CFR-RDIR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63CFR-RDJ | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63CFR-RDJR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63EFR-RDI | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |
H5TQ4G63EFR-RDIR | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+95 C |