K4E151611D-JC60T00SAM

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4E151611D-JC60T00SAM
Hersteller SAMSUNG
Produktkategorie DRAM
IC-Code 1MX16 EDO

Produktbeschreibung

Gehäuse SOJ-42
Verpackung
RoHS Leaded
Spannungsversorgung 5.0 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 60 NS
Standard Stückzahl
Abmessungen Karton
Bit Organization x16
Generation 5th Generation
Power Normal Power

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

Verfügbare Angebote

Teilenummer Menge Datecode
K4E151611D-JC60T00SAM 3.000 Anfrage senden
K4E151611D-JC60T00SAM 55.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
HY51181647JC-60 SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164BJC-6 SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164BJC-60 SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164BJC-60 T/R SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164BJC60DR SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164CJC-160TR SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164CJC-6 SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164CJC-60 SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164CJC-60 SOJ-42 5.0 V 60 NS 0 C~+85 C
HY5118164CJC-60 (1MX16/EDO) SOJ-42 5.0 V 60 NS 0 C~+85 C