Gehäuse | SOJ-42 |
Verpackung | TRAY |
RoHS | Leaded |
Spannungsversorgung | 5.0 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 60 NS |
Standard Stückzahl | |
Abmessungen Karton | |
Bit Organization | x16 |
Generation | 5th Generation |
Power | Medium |
DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HY51181647JC-60 | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164BJC-6 | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164BJC-60 | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164BJC-60 T/R | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164BJC60DR | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164CJC-160TR | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164CJC-6 | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164CJC-60 | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164CJC-60 | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |
HY5118164CJC-60 (1MX16/EDO) | SOJ-42 | 5.0 V | 60 NS | 0 C~+85 C |