K4E171612DJC5060

Produktübersicht

IC Picture

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Hersteller-Nummer K4E171612DJC5060
Hersteller SAMSUNG
Produktkategorie DRAM
IC-Code 1MX16 EDO

Produktbeschreibung

Gehäuse SOJ-42
Verpackung TRAY
RoHS Leaded
Spannungsversorgung 3.3 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 60 NS
Standard Stückzahl
Abmessungen Karton
Bit Organization x16
Generation 5th Generation
Power Normal Power

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

Verfügbare Angebote

Teilenummer Menge Datecode
K4E171612DJC5060 12.000 Anfrage senden
K4E171612DJC5060 15.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
HY51V16164BJC-6 SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V16164BJC-60 SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164B JC-60 SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164BJC-6 SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164BJC-60 SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164CJC-6 SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164CJC-60 SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164CJC-60 (1MX16/EDO/3. SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164CJC-60D SOJ-42 3.3 V 60 NS 0 C~+85 C
HY51V18164CJC-60DR SOJ-42 3.3 V 60 NS 0 C~+85 C