K4H510838B-TCC
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4H510838B-TCC |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR1 SDRAM |
| IC-Code | 64MX8 DDR1 |
Produktbeschreibung
| Gehäuse | TSOP2(66) |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 2.5 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 200 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 3rd Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4H510838B-TCC | 5.760 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| IS43R86400D -5T | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400D-5 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400D-5TL | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400D-5TL | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400D-5TL-TR | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400E -5T | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400E-5TL | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400E-5TL-TR | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400F -5T | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R86400F-5TL | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |