K4H511638-B-TCBD

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4H511638-B-TCBD
Hersteller SAMSUNG
Produktkategorie DDR1 SDRAM
IC-Code 32MX16 DDR1

Produktbeschreibung

Gehäuse TSOP2(66)
Verpackung
RoHS Leaded
Spannungsversorgung 2.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 166 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal Power

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4H511638DUCB300 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638DUCB35 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3 NBSP TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB30 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3000 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3T TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3T00 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3TCV TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C