K4H511638B-TCB3

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4H511638B-TCB3
Hersteller SAMSUNG
Produktkategorie DDR1 SDRAM
IC-Code 32MX16 DDR1
Andere Bezeichnungen K4H511638B-TCB300
K4H511638B-TCB3000
K4H511638B-TCB3T
K4H511638B-TCB3T00
K4H511638BTCB3

Produktbeschreibung

Gehäuse TSOP2(66)
Verpackung
RoHS Leaded
Spannungsversorgung 2.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 166 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4H511638BTCB3 5.671 Anfrage senden
K4H511638BTCB3 66 0601+ Anfrage senden
K4H511638BTCB3 510 Anfrage senden
K4H511638BTCB3 7.000 Anfrage senden
K4H511638B-TCB3000 10.000 2009+ Anfrage senden
K4H511638BTCB3 1.478 2007+ Anfrage senden
K4H511638BTCB3 791 200440+ Anfrage senden
K4H511638BTCB3 1.000 10+ Anfrage senden
K4H511638B-TCB3000 10.000 Anfrage senden
K4H511638BTCB3 5.868 2004+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4H511638D-UCB3512MBIT TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638D-UCB3NY TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638D-UCB3T TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638D-UCB3T00 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638D-ULB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638DUCB300 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638DUCB35 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638F-LCB3 NBSP TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C