K4H511638B-UCB0

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4H511638B-UCB0
Hersteller SAMSUNG
Produktkategorie DDR1 SDRAM
IC-Code 32MX16 DDR1
Andere Bezeichnungen K4H511638B-UCB000
K4H511638B-UCB00HI

Produktbeschreibung

Gehäuse TSOP2(66)
Verpackung TRAY
RoHS Leaded
Spannungsversorgung 2.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 133 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Power Normal Power
Generation 3rd Generation

Verfügbare Angebote

Teilenummer Menge Datecode
K4H511638B-UCB0 10.000 2009+ Anfrage senden
K4H511638B-UCB0 15.000 09+ Anfrage senden
K4H511638B-UCB0 8.564 09+ Anfrage senden
K4H511638B-UCB0 1.478 2007+ Anfrage senden
K4H511638B-UCB0 8.564 2009+ Anfrage senden
K4H511638B-UCB0 10.000 Anfrage senden
K4H511638B-UCB0 13.500 Anfrage senden
K4H511638B-UCB0 12.000 Anfrage senden
K4H511638B-UCB0 6.000 Anfrage senden
K4H511638B-UCB000 5.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4H511638A-TCA2 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638A-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638A-TLA2 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638A-TLB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TC/LB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCA2 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TCB0000 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C
K4H511638B-TLA2 TSOP2(66) 2.5 V 133 MHZ 0 C~+85 C