K4H511638C-UCCC

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4H511638C-UCCC
Hersteller SAMSUNG
Produktkategorie DDR1 SDRAM
IC-Code 32MX16 DDR1
Andere Bezeichnungen K4H511638C-UCCC0
K4H511638C-UCCC000
K4H511638C-UCCCT
K4H511638CUCCC00
K4H511638CUCCCT00

Produktbeschreibung

Gehäuse TSOP2(66)
Verpackung
RoHS Leaded
Spannungsversorgung 2.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 200 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 4th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4H511638C-UCCC 10.000 Anfrage senden
K4H511638C-UCCC 5.500 Anfrage senden
K4H511638C-UCCC 117 07+ Anfrage senden
K4H511638C-UCCC000 9.600 14+ Anfrage senden
K4H511638C-UCCC 11.350 16+ Anfrage senden
K4H511638C-UCCC 5.000 6 Anfrage senden
K4H511638C-UCCC 5.000 06+ Anfrage senden
K4H511638C-UCCC 558 2007+ Anfrage senden
K4H511638C-UCCC 558 2006+ Anfrage senden
K4H511638C-UCCC000 10.000 2009+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4H511638D-UC/LCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC 25 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC00 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC000 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC0000 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC0RA TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCC10K TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638D-UCCCORA TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C