K4H511638D-UCB3512MBIT

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4H511638D-UCB3512MBIT
Hersteller SAMSUNG
Produktkategorie DDR1 SDRAM
IC-Code 32MX16 DDR1

Produktbeschreibung

Gehäuse TSOP2(66)
Verpackung TAPE ON REEL
RoHS Leaded
Spannungsversorgung 2.5 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 166 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 5th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4H511638D-UCB3512MBIT 571 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4H511638B-TC/LB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-TCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-TCB300 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-TCB3000 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-TCB3T TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-TCB3T00 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-TLB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-UCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-UCB3000 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638B-UCB3T00 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C