K4H511638D-UIB3
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4H511638D-UIB3 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR1 SDRAM |
| IC-Code | 32MX16 DDR1 |
Produktbeschreibung
| Gehäuse | TSOP2(66) |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 2.5 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 166 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 5th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4H511638D-UIB3 | 2.000 | 2009+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EDD5116ADTA-6BLI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| EDD5116ADTA-6BLI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| EDD5116ADTA-6BTI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| EDD5116ADTA-6BTI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| EDD5116AFTA-6BTI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| EDD5116AGTA-6BTI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R16320D-6TLA1 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R16320D-6TLI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R16320E-6TLA1 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R16320E-6TLI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |