Bilder dienen nur der Illustration
| Hersteller-Nummer | K4S641632E |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM |
| IC-Code | 4MX16 SD |
| Andere Bezeichnungen | K4S641632E-TC5 |
| K4S641632E-TC500 | |
| K4S641632E-TC60 | |
| K4S641632E-TC60/75 | |
| K4S641632E-TC60000 | |
| K4S641632E-TC60T00 | |
| K4S641632E-TC7 | |
| K4S641632E-TC70 | |
| K4S641632E-TC7000 | |
| K4S641632E-TC70000 | |
| K4S641632E-TC70T00 | |
| K4S641632ETC-6 | |
| K4S641632ETC50 | |
| K4S641632ETC60 | |
| K4S641632ETC6000 |
| Gehäuse | TSOP2(54) |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 200 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4S641632ETC60 | 6.500 | Anfrage senden | |
| K4S641632E-TC70 | 35.000 | Anfrage senden | |
| K4S641632ETC60 | 480 | 2002 | Anfrage senden |
| K4S641632E-TC60T00 | 3.800 | 8 | Anfrage senden |
| K4S641632E-TC70 | 1.000 | Anfrage senden | |
| K4S641632ETC60 | 36.000 | 10+ | Anfrage senden |
| K4S641632E-TC70 | 2.000 | 2008+ | Anfrage senden |
| K4S641632E-TC70 | 7.000 | 2009+ | Anfrage senden |
| K4S641632ETC60 | 12.000 | 2008+ | Anfrage senden |
| K4S641632ETC50 | 2.547 | 2007+ | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| IC42S16400-5TG | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400F-5TL | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400F-5TL-TR | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400J 5TL | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400J-5T | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400J-5TC | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400J-5TL | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400J-5TL-TR | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400N-5T | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |
| IS42S16400N-5TL | TSOP2(54) | 3.3 V | 200 MHZ | 0 C~+85 C |