K4S641633H-RN75
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4S641633H-RN75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 4MX16 SD |
| Andere Bezeichnungen | K4S641633H-RN75( ) |
| K4S641633H-RN75000 | |
| K4S641633H-RN750JR | |
| K4S641633H-RN75T |
Produktbeschreibung
| Gehäuse | FBGA-54 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 3.0V/3.3V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 4M |
| Bit Organization | x16 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Low, i-TCSR |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4S641633H-RN75 | 4.000 | Anfrage senden | |
| K4S641633H-RN75 | 9.600 | 14+ | Anfrage senden |
| K4S641633H-RN75 | 2.609 | 05+ | Anfrage senden |
| K4S641633H-RN75 | 24 | DC0452 | Anfrage senden |
| K4S641633H-RN75 | 2.171 | 2005+ | Anfrage senden |
| K4S641633H-RN75 | 481 | 2005+ | Anfrage senden |
| K4S641633H-RN75000 | 597 | Anfrage senden | |
| K4S641633H-RN75 | 6.107 | Anfrage senden | |
| K4S641633H-RN75 | 1.000 | Anfrage senden | |
| K4S641633H-RN75 | 1.318 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4S641633H-F75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-R(B)L | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-RE75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-RL75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-RN7 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633H-TC75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633HBN750JR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633HBN75TLF | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633HR75BGA | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
| K4S641633HRBLF1 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |