Bilder dienen nur der Illustration
Hersteller-Nummer | K4S641633K-BN750 |
Hersteller | SAMSUNG |
Produktkategorie | SDRAM MOBILE |
IC-Code | 4MX16 SD |
Andere Bezeichnungen | K4S641633K-BN750JR |
Gehäuse | FBGA-54 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 3.0V/3.3V |
Betriebstemperatur | -25 C~+85 C |
Geschwindigkeit | 133 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 4M |
Bit Organization | x16 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 12th Generation |
Power | Low, i-TCSR |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4S641633K-BN750 | 50.000 | 09+ | Anfrage senden |
K4S641633K-BN750 | 50.000 | 2008+ | Anfrage senden |
K4S641633K-BN750JR | 50.000 | 08+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4S641633H-F75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-R(B)L | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RE75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RL75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN7 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75( ) | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75000 | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN750JR | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |
K4S641633H-RN75T | FBGA-54 | 3.0V/3.3V | 133 MHZ | -25 C~+85 C |