Gehäuse | TSOP2(86) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 166 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4S643232HTC60TR | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232HTC60TSOPII | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232HTC60TSOPII86T R | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232HTC60TT7R | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232HUC60-PBF | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232HUC60SMG | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232HUC60TC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232HUC60TSG | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232K-UC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232N-LC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |