Gehäuse | TSOP2(86) |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 143 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4S643232H-UC70 | 140 | 06+ | Anfrage senden |
K4S643232H-UC70 | 4.000 | 08+ | Anfrage senden |
K4S643232H-UC70 | 6.500 | Anfrage senden | |
K4S643232H-UC70 | 41 | DC07 | Anfrage senden |
K4S643232H-UC70 | 41 | 7 | Anfrage senden |
K4S643232H-UC70T00 | 4.000 | Anfrage senden | |
K4S643232H-UC70 | 792 | Anfrage senden | |
K4S643232H-UC70 | 6.594 | Anfrage senden | |
K4S643232H-UC70 | 2.000 | Anfrage senden | |
K4S643232H-UC70 | 4.748 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
IC42S32200-6T/7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200-7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200-7TC6 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200/L-7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S322007TG | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200L-7TG | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32202-7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IS42S32200-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IS42S32200-70T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IS42S32200-70TI | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |