K4S643232HTI50
Produktbeschreibung
| Gehäuse | TSOP2(86) |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 200 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HY57V643220CLT-5I | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| HY57V643220CT-5I | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| HY57V653220BLTC-5I | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| IS42S32200L-5TI | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| K4S643232E-TI50000 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| K4S643232ETI-60/50 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| K4S643232HUI50 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |