K4S643232HUC75

Produktübersicht

IC Picture

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Hersteller-Nummer K4S643232HUC75
Hersteller SAMSUNG
Produktkategorie SDRAM
IC-Code 2MX32 SD
Andere Bezeichnungen K4S643232H-UC75/T

Produktbeschreibung

Gehäuse TSOP2(86)
Verpackung
RoHS RoHS
Spannungsversorgung 3.3 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 133 MHZ
Standard Stückzahl
Abmessungen Karton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Verfügbare Angebote

Teilenummer Menge Datecode
K4S643232HUC75 9.950 Anfrage senden
K4S643232HUC75 8.000 Anfrage senden
K4S643232HUC75 5.000 Anfrage senden
K4S643232HUC75 5.000 2006+ Anfrage senden
K4S643232H-UC75/T 10.000 Anfrage senden
K4S643232HUC75 20.000 2006 Anfrage senden
K4S643232HUC75 1.000 Anfrage senden
K4S643232HUC75 20.000 2006+ Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4S643232C-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232C-TC750000 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232CTC75T TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232D-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232D-TL75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232E-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232E-TC750000 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232E-TC75T00 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232F-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232F-UC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C