K4T1G084QF-BPE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G084QF-BPE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 128MX8 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-60 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Low Power |
| Generation | 7th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G084QF-BPE6 | 2.000 | 2010+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HY5PS1G831CFP-Y5I | FBGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280A-3DBLI | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280B-3DBI | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280B-3DBI-TR | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280B-3DBLA1 | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280B-3DBLI | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280C-3DBI | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280C-3DBLA1 | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280C-3DBLI | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR81280D-3DBA1 | BGA-60 | 1.8 V | 667 MBPS | -40 C~+85 C |