K4T1G1646QF-HCE7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G1646QF-HCE7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 17th Generation |
| Power | Low, i-TCSR & PASR & DS |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G1646QF-HCE7 | 30.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| MT47H64M16NF-25E:M TR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| MT47H64M16NF-25E:M TR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| MT47H64M16NF-25E:M TR MIC | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| MT47H64M16NF-25EM | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| MT47H64M16NF-25EM PBF | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| MT47H64M16NF25EMTR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| MT47H64M16NGF-25E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| W971GG6IB-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| W971GG6JB-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| W971GG6JB-25-TR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |