Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G1646QQ-HCE60 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Low, i-TCSR & PASR & DS |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G1646QQ-HCE60 | 28.000 | 10+ | Anfrage senden |
K4T1G1646QQ-HCE60 | 28.000 | Anfrage senden | |
K4T1G1646QQ-HCE60 | 28.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K4T1G164QE/Q-HCE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE/QQ-HCE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QE/QQ-HCE6T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QF-BCE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QF-BCE600 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QF-BCE6000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QF-BCE6000 SAM | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QF-BCE60000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QF-BCE6: | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G164QF-BCE6T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |