Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QE-BCE7 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QE-BCE7 | 6.500 | Anfrage senden | |
K4T1G164QE-BCE7 | 2.560 | Anfrage senden | |
K4T1G164QE-BCE7 | 12.500 | Anfrage senden | |
K4T1G164QE-BCE7 | 2.643 | 16+ | Anfrage senden |
K4T1G164QE-BCE7 | 100.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H64M16NF-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25:E:M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E ES:M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E PBF | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E: M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E:H | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
MT47H64M16NF-25E:M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |