K4T1G164QE-HC(L)E7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QE-HC(L)E7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G164QE-HC(L)E7 | 187 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HYB18T1G160C2FL-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T1G160C4F-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T1G160CFL-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160AF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160BF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160BF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160C2F-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160C2F-25F | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160CF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160CF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |