Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QE-HCE7/E6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H64M16HW-3E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3H-TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW/HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16JM-3 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16JM-37E ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16JM-37E:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16JM-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16M16HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16NF-25E:M 1368 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |