K4T1G164QE-HCF8 BGA
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QE-HCF8 BGA |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1066 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4T1G164QJ-BFF8T3V | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E ES:E | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E ES:G | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E ES:H | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E ES:M | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E:E | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E:G | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E:H | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| MT47H64M16HR-187E:M | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |