Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QE/Q-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low, i-TCSR & PASR & DS |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QE/Q-HCE6 | 30.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HYB18TC1G160CF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640A-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640B-3D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640B-3DB | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640B-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640B-3DBLT | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640BL-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640C-3DB | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR16640C-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
K4T1G1640AZCE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |