Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QE/QQ-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QE/QQ-HCE6T |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QE/QQ-HCE6 | 10.000 | 2010 | Anfrage senden |
K4T1G164QE/QQ-HCE6 | 10.000 | Anfrage senden | |
K4T1G164QE/QQ-HCE6 | 0 | Anfrage senden | |
K4T1G164QE/QQ-HCE6T | 30.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H64M16HR-3:E TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:G TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H D9LHR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H TR MIC | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H(4) | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H-TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3D9HNZ | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |