Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QF-BCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QF-BCE600 |
K4T1G164QF-BCE6000 | |
K4T1G164QF-BCE60000 | |
K4T1G164QF-BCE6: | |
K4T1G164QF-BCE6T | |
K4T1G164QF-BCE6T00 | |
K4T1G164QF-BCE6TCV | |
K4T1G164QFBCE60 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 7th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QF-BCE6 | 5.120 | Anfrage senden | |
K4T1G164QF-BCE6000 | 15.825 | 11+ | Anfrage senden |
K4T1G164QF-BCE6000 | 6.500 | Anfrage senden | |
K4T1G164QF-BCE6 | 86 | Anfrage senden | |
K4T1G164QF-BCE6 | 3.280 | 14+ | Anfrage senden |
K4T1G164QF-BCE6 | 10.000 | 21+ | Anfrage senden |
K4T1G164QF-BCE6 | 1.928 | 12+ | Anfrage senden |
K4T1G164QF-BCE6 | 350 | 11+ | Anfrage senden |
K4T1G164QF-BCE6 | 249 | 1034+ | Anfrage senden |
K4T1G164QF-BCE6 | 5.000 | 11+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H64M16HR3L:H(:E) | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW 3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-37E:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3: H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:E TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HW-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |