Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QF-BCE7 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QF-BCE70 |
K4T1G164QF-BCE7000 | |
K4T1G164QF-BCE70000 | |
K4T1G164QF-BCE7: | |
K4T1G164QF-BCE7T | |
K4T1G164QF-BCE7T00 | |
K4T1G164QF-BCE7TCV |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 7th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QF-BCE7T00 | 814 | Anfrage senden | |
K4T1G164QF-BCE7 | 117 | 1419+ | Anfrage senden |
K4T1G164QF-BCE7 | 158 | 1343+ | Anfrage senden |
K4T1G164QF-BCE7T00 | 844 | Anfrage senden | |
K4T1G164QF-BCE7 | 777 | 11+/12+ | Anfrage senden |
K4T1G164QF-BCE7 | 25 | 1131 | Anfrage senden |
K4T1G164QF-BCE7 | 9.800 | 11+ | Anfrage senden |
K4T1G164QF-BCE7000 | 5.500 | Anfrage senden | |
K4T1G164QF-BCE7 | 4.000 | Anfrage senden | |
K4T1G164QF-BCE7 | 31 | 14+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HYB18TC1G160D2F-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IC43DR16640B-25DBL | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IC43DR16640C-25DBL | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR16640A-25DBL | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR16640A-25EBL | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR16640B -25DB | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR16640B-25DBL | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR16640B-25EBL | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR16640BL-25DBL | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
IS43DR16640C -25DB | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |