Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QG-BCE7 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QG-BCE7000 |
K4T1G164QG-BCE70000 | |
K4T1G164QG-BCE70JP | |
K4T1G164QG-BCE7T | |
K4T1G164QG-BCE7T00 | |
K4T1G164QG-BCE7TCV |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 8th Generation |
Power | Normal Power |
Teilenummer | Menge | Stückpreis (USD) | Datecode | Anmerkung | |
---|---|---|---|---|---|
K4T1G164QG-BCE7000 | 29 | 15 | Auf Lager | Anfrage senden |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QG-BCE7 | 3.840 | Anfrage senden | |
K4T1G164QG-BCE7 | 27.000 | Anfrage senden | |
K4T1G164QG-BCE7000 | 6.500 | Anfrage senden | |
K4T1G164QG-BCE7 | 5.500 | Anfrage senden | |
K4T1G164QG-BCE7 | 1.264 | 2015+ | Anfrage senden |
K4T1G164QG-BCE7 | 427 | 1622+ | Anfrage senden |
K4T1G164QG-BCE7 | 0 | Anfrage senden | |
K4T1G164QG-BCE7 | 100,000+ | Anfrage senden | |
K4T1G164QG-BCE7 | 26 | 622 | Anfrage senden |
K4T1G164QG-BCE7 | 2.020 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HYB18T1G160C2FL-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T1G160C4F-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T1G160CFL-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC1G160AF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC1G160BF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC1G160BF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC1G160C2F-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC1G160C2F-25F | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC1G160CF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18TC1G160CF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |