Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QJ-BIE7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
| Andere Bezeichnungen | K4T1G164QJ-BIE7000 |
| K4T1G164QJ-BIE70CV | |
| K4T1G164QJ-BIE7T00 | |
| K4T1G164QJ-BIE7TCV |
| Gehäuse | FBGA-84 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | 1280 |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 11th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T1G164QJ-BIE7000 | 0 | Anfrage senden | |
| K4T1G164QJ-BIE7 | 8.530 | Anfrage senden | |
| K4T1G164QJ-BIE7 | 14 | Anfrage senden | |
| K4T1G164QJ-BIE7 | 2.000 | 2016+ | Anfrage senden |
| K4T1G164QJ-BIE7 | 1.887 | Anfrage senden | |
| K4T1G164QJ-BIE70CV | 530 | 21+ | Anfrage senden |
| K4T1G164QJ-BIE7 | 2.000 | Anfrage senden | |
| K4T1G164QJ-BIE7 | 1.904 | Anfrage senden | |
| K4T1G164QJ-BIE7TCV | 12.000 | Anfrage senden | |
| K4T1G164QJ-BIE70CV | 2.589 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| AS4C64M16D2-25BIN | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C64M16D2-25BIN PBF | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C64M16D2-25BINTR | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C64M16D2A-25BIN | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| AS4C64M16D2A-25BINTR | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| EM68C16CWQD-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| EM68C16CWQE-25IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| EM68C16CWQG-25 IH | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| H5PS1G63KFR-S5IR | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
| IS43DR16640A 25EBLI | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |