Bilder dienen nur der Illustration
Hersteller-Nummer | K4T1G164QQ-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX16 DDR2 |
Andere Bezeichnungen | K4T1G164QQ-HCE60 |
K4T1G164QQ-HCE600 | |
K4T1G164QQ-HCE6000 | |
K4T1G164QQ-HCE60JR | |
K4T1G164QQ-HCE6T | |
K4T1G164QQ-HCE6T00 | |
K4T1G164QQ-HCE6T000 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 17th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T1G164QQ-HCE6 | 446 | 10+ | Anfrage senden |
K4T1G164QQ-HCE6 | 4.000 | Anfrage senden | |
K4T1G164QQ-HCE6 | 1.016 | 08+ | Anfrage senden |
K4T1G164QQ-HCE6 | 7.840 | 0922+10+ | Anfrage senden |
K4T1G164QQ-HCE6 | 966 | 10+ | Anfrage senden |
K4T1G164QQ-HCE6 | 8 | Anfrage senden | |
K4T1G164QQ-HCE6 | 248 | Anfrage senden | |
K4T1G164QQ-HCE6 | 12.500 | Anfrage senden | |
K4T1G164QQ-HCE6 | 11.350 | 16+ | Anfrage senden |
K4T1G164QQ-HCE6 | 8.960 | 2010+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H64M16HR-37EES:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-37EG | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-37EL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:E TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:G TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3:H D9LHR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |