K4T1G164QQ-HCE6TM0
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T1G164QQ-HCE6TM0 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | 1280 |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 17th Generation |
| Power | Normal Power |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HYB18TC1G160CF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640A-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3D | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3DB | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640B-3DBLT | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640BL-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640C-3DB | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| IS43DR16640C-3DBL | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G1640AZCE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |