Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51083QE/G-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 64MX8 DDR2 |
Gehäuse | FBGA-60 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 6th Generation |
Power | Low, i-TCSR & PASR & DS |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51083QE/G-HCE6 | 20.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HYB18T512800B2F-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800B2F-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800B2FL-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800BF-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800BF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800BF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800CF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800TC-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800TCL-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512800TF-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |