K4T51083QI-HCE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51083QI-HCE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 64MX8 DDR2 |
| Andere Bezeichnungen | K4T51083QI-HCE60 |
| K4T51083QI-HCE6000 |
Produktbeschreibung
| Gehäuse | FBGA-60 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | 1280 |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 10th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51083QI-HCE6 | 9.950 | Anfrage senden | |
| K4T51083QI-HCE6 | 6.322 | Anfrage senden | |
| K4T51083QI-HCE6 | 6.912 | 11 | Anfrage senden |
| K4T51083QI-HCE6 | 504 | 11+ | Anfrage senden |
| K4T51083QI-HCE6 | 881 | Anfrage senden | |
| K4T51083QI-HCE6 | 12.500 | Anfrage senden | |
| K4T51083QI-HCE6 | 129 | Anfrage senden | |
| K4T51083QI-HCE6 | 200 | 11 | Anfrage senden |
| K4T51083QI-HCE6 | 5.120 | 11+ | Anfrage senden |
| K4T51083QI-HCE6 | 900 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HYB18T512800B2F-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800B2F-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800B2FL-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800BF-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800BF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800BF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800CF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800TC-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800TCL-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512800TF-3 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |