K4T51163QBZCD5
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QBZCD5 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
| Andere Bezeichnungen | K4T51163QB-ZCD5000 |
| K4T51163QBZCD5T00 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 533 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 3rd Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51163QBZCD5 | 6.240 | Anfrage senden | |
| K4T51163QBZCD5 | 1.500 | Anfrage senden | |
| K4T51163QBZCD5 | 9.600 | 14+ | Anfrage senden |
| K4T51163QBZCD5 | 2.000 | 2009+ | Anfrage senden |
| K4T51163QBZCD5 | 2.240 | 10+ | Anfrage senden |
| K4T51163QBZCD5 | 1.238 | 08+ | Anfrage senden |
| K4T51163QBZCD5 | 11.205 | 2007+ | Anfrage senden |
| K4T51163QBZCD5 | 34 | Anfrage senden | |
| K4T51163QBZCD5 | 960 | Anfrage senden | |
| K4T51163QB-ZCD5000 | 390 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HYB18T512160B2FL-3.7 | TFBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512160BF-3.7 | TFBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512160TC-3.7 | TFBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512160TCL-3.7 | TFBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512160TF-3.7 | TFBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512161AF-37 | TFBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512161BF-37 | TFBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18TC512160AF3.7 | FBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18TC512160B2F-3.7 | FBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18TC512160BF-3.7 | FBGA-84 | 1.8 V | 533 MBPS | 0 C~+85 C |