K4T51163QC-HCE7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QC-HCE7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 4th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51163QC-HCE7 | 22.400 | 2010+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HYB18T512160BF-25F | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160BF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160CF-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160TC-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160TC-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160TCL-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160TCL-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160TF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T512160TF-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T5121618BF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |