Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QE-ZCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QE-ZCE60 |
K4T51163QE-ZCE6000 | |
K4T51163QE-ZCE60000 | |
K4T51163QE-ZCE60JR | |
K4T51163QE-ZCE60T00 | |
K4T51163QE-ZCE6T | |
K4T51163QE-ZCE6T00 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QE-ZCE6 | 595 | 201323+ | Anfrage senden |
K4T51163QE-ZCE6 | 12.500 | Anfrage senden | |
K4T51163QE-ZCE6 | 11.350 | 16+ | Anfrage senden |
K4T51163QE-ZCE6 | 190 | Anfrage senden | |
K4T51163QE-ZCE6 | 8.483 | Anfrage senden | |
K4T51163QE-ZCE6 | 2.425 | Anfrage senden | |
K4T51163QE-ZCE6 | 2.558 | Anfrage senden | |
K4T51163QE-ZCE6000 | 4.300 | 7 | Anfrage senden |
K4T51163QE-ZCE6 | 1.600 | 8 | Anfrage senden |
K4T51163QE-ZCE6 | 2.563 | 2008+ | Anfrage senden |