Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QE-ZIF7 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 6th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QE-ZIF7 | 2.000 | 2009+ | Anfrage senden |
K4T51163QE-ZIF7 | 2.000 | 10+ | Anfrage senden |
K4T51163QE-ZIF7 | 1.238 | 07+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HYB18T512160AC-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160AF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160AF-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160B2C-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160B2F-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160B2F-25F | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160B2F-3S/25F | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160B2F-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160B2FL-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160BF-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |