Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QG-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QG-HCE60 |
K4T51163QG-HCE600 | |
K4T51163QG-HCE600/T00 | |
K4T51163QG-HCE6000 | |
K4T51163QG-HCE60CV | |
K4T51163QG-HCE60T00 | |
K4T51163QG-HCE6: | |
K4T51163QG-HCE6T | |
K4T51163QG-HCE6T00 | |
K4T51163QG-HCE6T000 |
Gehäuse | FBGA-84 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | 1280 |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QG-HCE6 | 2.451 | Anfrage senden | |
K4T51163QG-HCE60CV | 6.500 | Anfrage senden | |
K4T51163QG-HCE6T00 | 4.000 | Anfrage senden | |
K4T51163QG-HCE6 | 158 | 0928+ | Anfrage senden |
K4T51163QG-HCE6 | 3.456 | 09+ | Anfrage senden |
K4T51163QG-HCE6 | 2.852 | 09+ | Anfrage senden |
K4T51163QG-HCE6 | 110 | 09+10+ | Anfrage senden |
K4T51163QG-HCE6 | 2.698 | Anfrage senden | |
K4T51163QG-HCE6 | 1.356 | Anfrage senden | |
K4T51163QG-HCE6 | 32 | 200931 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H32M16HW-25E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E: G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25E:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25EF | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25EFTR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-3 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-37 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |