Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QG-HCE6TJP |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QG-HCE6TJP | 1.750 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
HY5PS121621LF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621LFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T5121600BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160AF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160AF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2C3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2F-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160BC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |