K4T51163QG-HCE7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QG-HCE7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
| Andere Bezeichnungen | K4T51163QG-HCE7000 |
| K4T51163QG-HCE70JP | |
| K4T51163QG-HCE7T | |
| K4T51163QG-HCE7T00 | |
| K4T51163QGHCE70 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 8th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51163QGHCE70 | 4.000 | Anfrage senden | |
| K4T51163QG-HCE7 | 400 | Anfrage senden | |
| K4T51163QG-HCE7 | 109 | 1016+ | Anfrage senden |
| K4T51163QG-HCE7 | 129 | 09+ | Anfrage senden |
| K4T51163QG-HCE7 | 978 | 09+ | Anfrage senden |
| K4T51163QG-HCE7 | 174 | 1016+ | Anfrage senden |
| K4T51163QG-HCE7 | 12.500 | Anfrage senden | |
| K4T51163QG-HCE7 | 166 | 10+ | Anfrage senden |
| K4T51163QG-HCE7 | 174 | 1016 | Anfrage senden |
| K4T51163QG-HCE7 | 9.600 | 14+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| W9751G6NB-25 | FBGA-84 | 1.70-1.95V | 800 MBPS | 0 C~+85 C |
| W9751G6NB-25/TRAY | FBGA-84 | 1.70-1.95V | 800 MBPS | 0 C~+85 C |
| W9751G6NB-25TR | FBGA-84 | 1.70-1.95V | 800 MBPS | 0 C~+85 C |