Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QI-HCE70D |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Andere Bezeichnungen | K4T51163QI-HCE70DT |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 800 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QI-HCE70DT | 15.000 | '11 | Anfrage senden |
K4T51163QI-HCE70DT | 15.360 | '11 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
H5PS5162KFR-S6C/RB | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
H5PS5162KFR-S6CR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HXB18T512160BF(L)-25D | TFBGA-84 | 1.8V | 800 MBPS | 0 C~+85 C |
HXB18T512160BF(L)-25E | TFBGA-84 | 1.8V | 800 MBPS | 0 C~+85 C |
HY5PS121621AF-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AF-S5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AF-S6 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AFP-E3 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AFP-S5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HY5PS121621AFP-S6 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |