K4T51163QI-HCF80DT
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QI-HCF80DT |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | TAPE ON REEL |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 1066 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 10th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51163QI-HCF80DT | 20.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EM68B16CWPA-18H | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| H5PS5162FFR-G7CR | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| H5PS5162GFR-G7CR | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| H5PS5162KFR-G7CR | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| HXB18T512160BF(L)-19F | TFBGA-84 | 1.8V | 1066 MBPS | 0 C~+85 C |
| HYB18TC512160CF-1.9 | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| K4T511638D-UCB3 | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| K4T511638I-HCF8 | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| K4T51163QE-HCF8 | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |
| K4T51163QG-BCF8000 | FBGA-84 | 1.8 V | 1066 MBPS | 0 C~+85 C |