K4T51163QI-HLE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QI-HLE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 10th Generation |
| Power | Low Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51163QI-HLE6 | 2.000 | 2010+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HY5PS121621LF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621LFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T5121600BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160AF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160AF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160B2C3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160B2F-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160B2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160B2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160BC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |