K4T51163QJ-BIE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QJ-BIE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
| Andere Bezeichnungen | K4T51163QJ-BIE6000 |
| K4T51163QJ-BIE6TCV |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 11th Generation |
| Power | Normal Power |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T51163QJ-BIE6 | 5.500 | Anfrage senden | |
| K4T51163QJ-BIE6TCV | 8.000 | Anfrage senden | |
| K4T51163QJ-BIE6000 | 2.500 | Anfrage senden | |
| K4T51163QJ-BIE6 | 176 | 11+ | Anfrage senden |
| K4T51163QJ-BIE6 | 9.000 | 14+ | Anfrage senden |
| K4T51163QJ-BIE6 | 170 | Anfrage senden | |
| K4T51163QJ-BIE6 | 9.000 | Anfrage senden | |
| K4T51163QJ-BIE6 | 651 | Anfrage senden | |
| K4T51163QJ-BIE6 | 0 | Anfrage senden | |
| K4T51163QJ-BIE6 | 10.000 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HYB18T512160BF3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160BF3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TCL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TFL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512161BF-33 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512161BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC512160AF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC512160B2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |